The monolithic integration of tunneling diodes 0s) with other semiconductor devices such as HEMTs or HBTS, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT\TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.7511~4 at 5OOmV and generates an output power of -16dBm The maximum tuning range is 15OMHz and the single sideband-twarrier ratio (SSCR) is of -1OSdBdHz at 5MHz.
Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application / Cidronali, A; Collodi, G.; Camprini, M.; Nair, V.; Manes, G.; Lewis, J.; Goronkin, H.. - STAMPA. - (2002), pp. 297-300. (Intervento presentato al convegno 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium tenutosi a Seatle, WA, usa nel 2002).
Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application
CIDRONALI, ALESSANDRO;COLLODI, GIOVANNI;MANES, GIANFRANCO;
2002
Abstract
The monolithic integration of tunneling diodes 0s) with other semiconductor devices such as HEMTs or HBTS, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT\TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.7511~4 at 5OOmV and generates an output power of -16dBm The maximum tuning range is 15OMHz and the single sideband-twarrier ratio (SSCR) is of -1OSdBdHz at 5MHz.
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