A possible upgrade of the CERN Large Hadron Collider luminosity up to 1035 cm−2 s−1 will rise the hadron fluences in the inner detector region of the future high energy physics experiments up to ∼1016 cm−2, well beyond the present operational limits of state-of-art Si tracking detectors. The goal of the CERN RD50 collaboration is to push the semiconductordetector technology beyond these limits, through the development of radiationhard bulk materials and the optimisation of the electrode configuration of the device. Recent results of the RD50 collaboration concerning materialengineering are presented.
Material engineering for the development of ultra-radiation hard semiconductor detectors / M. BRUZZI. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 518:(2004), pp. 336-337. [10.1016/j.nima.2003.11.013]
Material engineering for the development of ultra-radiation hard semiconductor detectors
BRUZZI, MARA
2004
Abstract
A possible upgrade of the CERN Large Hadron Collider luminosity up to 1035 cm−2 s−1 will rise the hadron fluences in the inner detector region of the future high energy physics experiments up to ∼1016 cm−2, well beyond the present operational limits of state-of-art Si tracking detectors. The goal of the CERN RD50 collaboration is to push the semiconductordetector technology beyond these limits, through the development of radiationhard bulk materials and the optimisation of the electrode configuration of the device. Recent results of the RD50 collaboration concerning materialengineering are presented.
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