Low temperature photoluminescence spectroscopy is used to analyze the effects of the Ga coverage and of the postgrowth thermal annealing on the electronic properties of low density self-assembled GaAs/AlGaAs quantum dots (QDs) grown by modified droplet epitaxy (MDE). We demonstrate that with the MDE method it is possible to obtain low density and high efficiency QD samples with high photoluminescence efficiency. Large modifications of the photoluminescence band, which depend on Ga coverage and thermal annealing, are found and quantitatively interpreted by means of a simple model based on the Al-Ga interdiffusion.
Low Density GaAs/AlGaAs Quantum Dots Grown by Modified Droplet Epitaxy, / MANTOVANI V.; SANGUINETTI S.; GUZZI M.; GRILLI E.; M. GURIOLI; WATANABE K. KOGUCHI N.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 96:(2004), pp. 4416-4421. [10.1063/1.1791756]
Low Density GaAs/AlGaAs Quantum Dots Grown by Modified Droplet Epitaxy,
GURIOLI, MASSIMO;
2004
Abstract
Low temperature photoluminescence spectroscopy is used to analyze the effects of the Ga coverage and of the postgrowth thermal annealing on the electronic properties of low density self-assembled GaAs/AlGaAs quantum dots (QDs) grown by modified droplet epitaxy (MDE). We demonstrate that with the MDE method it is possible to obtain low density and high efficiency QD samples with high photoluminescence efficiency. Large modifications of the photoluminescence band, which depend on Ga coverage and thermal annealing, are found and quantitatively interpreted by means of a simple model based on the Al-Ga interdiffusion.
| File | Dimensione | Formato | |
|---|---|---|---|
|
jap04.pdf
Accesso chiuso
Tipologia:
Versione finale referata (Postprint, Accepted manuscript)
Licenza:
Tutti i diritti riservati
Dimensione
144.03 kB
Formato
Adobe PDF
|
144.03 kB | Adobe PDF | Richiedi una copia |
I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
