Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.
PHOTOLUMINESCENCE OF INDIVIDUAL DOPED GAAS/ALGAAS NANOFABRICATED QUANTUM DOTS / S.KALLIAKOS; C.P.GARCIA; V.PELLEGRINI; M.ZAMFIRESCU; L.CAVIGLI; M.GURIOLI; A. VINATTIERI; A.PINCZUK; B.S.DENNIS; L.N.PFEIFFER; K.W.WEST. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 90:(2007), pp. 181902-1-181902-3. [10.1063/1.2734397]
PHOTOLUMINESCENCE OF INDIVIDUAL DOPED GAAS/ALGAAS NANOFABRICATED QUANTUM DOTS
CAVIGLI, LUCIA;GURIOLI, MASSIMO;VINATTIERI, ANNA;
2007
Abstract
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.
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