The dosimetric response of silicon diodes made from high resistivity float zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon has been studied with a 60Co clinical radiotherapy gamma source. To investigate the changes in sensitivity with the accumulated dose, the diodes have been exposed to doses of 137Cs gamma-rays up to 6kGy. As expected, Si diodes showed a degradation in the signal response with the accumulated dose due to the formation of radiation-induced defects acting as lifetime killers. Nonetheless, the DOFZ Si diode appeared to be moderately radiation harder than the standard FZ sample, with a decay of sensitivity less pronounced.
CHARACTERIZATION OF STANDARD AND OXYGENATED FLOAT ZONE SI DIODES UNDER RADIOTHERAPY BEAMS / M. CASATI; M. BRUZZI; M. BUCCIOLINI; D. MENICHELLI; M. SCARINGELLA; C. PIEMONTE; E. FRETWURST. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 522:(2005), pp. 158-162. [10.1016/j.nima.2005.06.025]
CHARACTERIZATION OF STANDARD AND OXYGENATED FLOAT ZONE SI DIODES UNDER RADIOTHERAPY BEAMS
BRUZZI, MARA;BUCCIOLINI, MARTA;MENICHELLI, DAVID;
2005
Abstract
The dosimetric response of silicon diodes made from high resistivity float zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon has been studied with a 60Co clinical radiotherapy gamma source. To investigate the changes in sensitivity with the accumulated dose, the diodes have been exposed to doses of 137Cs gamma-rays up to 6kGy. As expected, Si diodes showed a degradation in the signal response with the accumulated dose due to the formation of radiation-induced defects acting as lifetime killers. Nonetheless, the DOFZ Si diode appeared to be moderately radiation harder than the standard FZ sample, with a decay of sensitivity less pronounced.
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