CdTe deposition on Ag(111) was obtained by Electrochemical Atomic Layer Epitaxy (ECALE) method, that is by the alternated underpotential deposition of tellurium and cadmium. The voltammetric analysis of the first TeUPD and CdUPD peaks indicates a mechanism of two-dimensional growth, which is consistent with an epitaxial growth. The ratio Cd:Te determined on the basis of electrochemical measurements is very close to the 1:1 stoichiometric ratio, which is indicative of a compound formation.
Electrochemical aspects of CdTe growth on the face (111) of silver by ECALE / F. Forni; M. Innocenti; G. Pezzatini; M. Foresti.. - In: ELECTROCHIMICA ACTA. - ISSN 0013-4686. - STAMPA. - 45:(2000), pp. 3225-3231. [10.1016/S0013-4686(00)00426-6]
Electrochemical aspects of CdTe growth on the face (111) of silver by ECALE
INNOCENTI, MASSIMO;PEZZATINI, GIOVANNI;FORESTI, MARIA LUISA
2000
Abstract
CdTe deposition on Ag(111) was obtained by Electrochemical Atomic Layer Epitaxy (ECALE) method, that is by the alternated underpotential deposition of tellurium and cadmium. The voltammetric analysis of the first TeUPD and CdUPD peaks indicates a mechanism of two-dimensional growth, which is consistent with an epitaxial growth. The ratio Cd:Te determined on the basis of electrochemical measurements is very close to the 1:1 stoichiometric ratio, which is indicative of a compound formation.
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