Silicon p+/n/n+ detectors with medium resistivities (400–500 Ωcm) have been analyzed as a function of neutron irradiation in the fluence range from 6.4·10^11 n/cm^2 to 2.5·10^15 n/cm^2. The changes in the effective carrier concentration have been related to the removal of the shallowlev el concentration induced by irradiation and to the introduction with the fluence of deep levels. The shallow levels have been studied by Thermally Stimulated Current (TSC) in the low-temperature range (10–20 K): a removal of one order of magnitude of the phosphorus concentration has been observed for fluences of the order of 1·10^14 n/cm^2. The presence of deep levels has been investigated by TSC and current-DLTS techniques.
Shallow- and deep-levels analysis in irradiatedmedium-resistivity silicon detectors / E. Borchi; M. Bruzzi; D. Menichelli; S. Pirollo. - In: NUOVO CIMENTO. A. - ISSN 0369-3546. - STAMPA. - 112:(1999), pp. 1359-1367.
Shallow- and deep-levels analysis in irradiatedmedium-resistivity silicon detectors
BORCHI, EMILIO;BRUZZI, MARA;MENICHELLI, DAVID;PIROLLO, SILVIA
1999
Abstract
Silicon p+/n/n+ detectors with medium resistivities (400–500 Ωcm) have been analyzed as a function of neutron irradiation in the fluence range from 6.4·10^11 n/cm^2 to 2.5·10^15 n/cm^2. The changes in the effective carrier concentration have been related to the removal of the shallowlev el concentration induced by irradiation and to the introduction with the fluence of deep levels. The shallow levels have been studied by Thermally Stimulated Current (TSC) in the low-temperature range (10–20 K): a removal of one order of magnitude of the phosphorus concentration has been observed for fluences of the order of 1·10^14 n/cm^2. The presence of deep levels has been investigated by TSC and current-DLTS techniques.I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.