Silicon p+/n/n+ detectors with medium resistivities (400–500 Ωcm) have been analyzed as a function of neutron irradiation in the fluence range from 6.4·10^11 n/cm^2 to 2.5·10^15 n/cm^2. The changes in the effective carrier concentration have been related to the removal of the shallowlev el concentration induced by irradiation and to the introduction with the fluence of deep levels. The shallow levels have been studied by Thermally Stimulated Current (TSC) in the low-temperature range (10–20 K): a removal of one order of magnitude of the phosphorus concentration has been observed for fluences of the order of 1·10^14 n/cm^2. The presence of deep levels has been investigated by TSC and current-DLTS techniques.

Shallow- and deep-levels analysis in irradiatedmedium-resistivity silicon detectors / E. Borchi; M. Bruzzi; D. Menichelli; S. Pirollo. - In: NUOVO CIMENTO. A. - ISSN 0369-3546. - STAMPA. - 112:(1999), pp. 1359-1367.

Shallow- and deep-levels analysis in irradiatedmedium-resistivity silicon detectors

BORCHI, EMILIO;BRUZZI, MARA;MENICHELLI, DAVID;PIROLLO, SILVIA
1999

Abstract

Silicon p+/n/n+ detectors with medium resistivities (400–500 Ωcm) have been analyzed as a function of neutron irradiation in the fluence range from 6.4·10^11 n/cm^2 to 2.5·10^15 n/cm^2. The changes in the effective carrier concentration have been related to the removal of the shallowlev el concentration induced by irradiation and to the introduction with the fluence of deep levels. The shallow levels have been studied by Thermally Stimulated Current (TSC) in the low-temperature range (10–20 K): a removal of one order of magnitude of the phosphorus concentration has been observed for fluences of the order of 1·10^14 n/cm^2. The presence of deep levels has been investigated by TSC and current-DLTS techniques.
1999
112
1359
1367
E. Borchi; M. Bruzzi; D. Menichelli; S. Pirollo
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/359067
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact