Several n+/n/p+ pixel detectors with medium resistivity (ρ = 1.9 kΩcm) and reduced thickness (200 μm) have been characterized after irradiation up to 5×10^14 n/cm^2, as an extension of measurements carried out in as-processed devices in the past. Results are really satisfactory: the leakage bulk current is quite low, and no breakdown is observed up to 300 V, which is the design bias in irradiated devices. Moreover, the use of medium resistivity material gives slightly higher radiation tolerance as compared with high resistivity case.
Electrical characterization of irradiated medium resistivity n+/n/p+ pixel detectors / W. Chen; C. Y. Chien; B. Dezillie; V. Eremin; Z. Li; D. Menichelli; X. Xie. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 426:(1999), pp. 47-50. [10.1016/S0168-9002(98)01496-X]
Electrical characterization of irradiated medium resistivity n+/n/p+ pixel detectors
MENICHELLI, DAVID;
1999
Abstract
Several n+/n/p+ pixel detectors with medium resistivity (ρ = 1.9 kΩcm) and reduced thickness (200 μm) have been characterized after irradiation up to 5×10^14 n/cm^2, as an extension of measurements carried out in as-processed devices in the past. Results are really satisfactory: the leakage bulk current is quite low, and no breakdown is observed up to 300 V, which is the design bias in irradiated devices. Moreover, the use of medium resistivity material gives slightly higher radiation tolerance as compared with high resistivity case.
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