We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 1014-1016 n/cm2. Priming conditions have been studied in detail in order to investigate the residual electric field due to frozen charged traps after the priming step and its influence on the TSC emission. Zero bias TSC measurements have also been performed as an additional tool to study the defects distribution and the residual electric field. The electric field distribution inside the sample and its effect on the TSC emission are qualitatively explained by a band diagrams description.

Optimization of the priming procedure for ThermallyStimulated Currents with heavily irradiated silicondetectors / M.Bruzzi;R.Mori;D. Menichelli;M.Scaringella. - ELETTRONICO. - (2010), pp. PoS(RD09)018-1-PoS(RD09)018-12. (Intervento presentato al convegno Proceedings of Science tenutosi a Firenze nel 30 settembre-2 ottobre 2010).

Optimization of the priming procedure for ThermallyStimulated Currents with heavily irradiated silicondetectors

BRUZZI, MARA;MORI, RICCARDO;MENICHELLI, DAVID;SCARINGELLA, MONICA
2010

Abstract

We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 1014-1016 n/cm2. Priming conditions have been studied in detail in order to investigate the residual electric field due to frozen charged traps after the priming step and its influence on the TSC emission. Zero bias TSC measurements have also been performed as an additional tool to study the defects distribution and the residual electric field. The electric field distribution inside the sample and its effect on the TSC emission are qualitatively explained by a band diagrams description.
2010
9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors-Rd09
Proceedings of Science
Firenze
30 settembre-2 ottobre 2010
M.Bruzzi;R.Mori;D. Menichelli;M.Scaringella
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/397390
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