In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.
Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems / R. Fagotti; A. Cidronali; G. Manes. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 2:(2011), pp. 89-91. [10.1109/LMWC.2010.2098859]
Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems
FAGOTTI, ROSSANO;CIDRONALI, ALESSANDRO;MANES, GIANFRANCO
2011
Abstract
In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.
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