Several 5×5 cm2 double-sided readout silicon strip detectors have been fabricated using planar technology. Electrical characteristics (I-V and C-V curves interstrip resistance versus bias voltage) have been measured. Some detectors have been tested with a scanning electron microscope to investigate defects due to the fabrication process. A few of them have been tested with a β source and with a 50-GeV electron beam. A strong correlation is observed between charges collected on the ohmic side and on the junction side. Preliminary results on capacitive charge division studies are also presented
Test results on double sided readout silicon strip detectors / G. Batignani;L. Bosisio;A. Conti;E. Focardi;F. Forti;M.A. Giorgi;M. Grandi;G. Parrini;P. Tempesta;G. Tonelli;G. Triggiani. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - ELETTRONICO. - 36:(1989), pp. 40-45. [10.1109/23.34398]
Test results on double sided readout silicon strip detectors
FOCARDI, ETTORE;
1989
Abstract
Several 5×5 cm2 double-sided readout silicon strip detectors have been fabricated using planar technology. Electrical characteristics (I-V and C-V curves interstrip resistance versus bias voltage) have been measured. Some detectors have been tested with a scanning electron microscope to investigate defects due to the fabrication process. A few of them have been tested with a β source and with a 50-GeV electron beam. A strong correlation is observed between charges collected on the ohmic side and on the junction side. Preliminary results on capacitive charge division studies are also presented
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