Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of thickness were measured for pitches between 60 and and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of of momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈100〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p+ implant has been studied and found to enhance the stability.
New results on silicon microstrip detectors of CMS tracker / N. Demaria;S. Albergo;M. Angarano;P. Azzi;E. Babucci;N. Bacchetta;A. Bader;G. Bagliesi;A. Basti;U. Biggeri;G.M. Bilei;D. Bisello;D. Boemi;G. Bolla;F. Bosi;L. Borrello;D. Bortoletto;C. Bozzi;S. Braibant;H. Breuker;M. Bruzzi;A. Buffini;S. Busoni;A. Candelori;A. Caner;R. Castaldi;A. Castro;E. Catacchini;B. Checcucci;P. Ciampolini;C. Civinini;D. Creanza;R. D'Alessandro;M.Da Rold;M. de Palma;R. Dell'Orso;R.Della Marina;S. Dutta;C. Eklund;A. Elliott-Peisert;G. Favro;L. Feld;L. Fiore;E. Focardi;M. French;K. Freudenreich;A. Fürtjes;A. Giassi;M. Giorgi;A. Giraldo;B. Glessing;W.H. Gu;G. Hall;R. Hammerstrom;T. Hebbeker;J. Hrubec;M. Huhtinen;A. Kaminsky;V. Karimaki;St. Koenig;M. Krammer;P. Lariccia;M. Lenzi;M. Loreti;K. Luebelsmeyer;W. Lustermann;P. Mättig;G. Maggi;M. Mannelli;G. Mantovani;A. Marchioro;C. Mariotti;G. Martignon;B.Mc Evoy;M. Meschini;A. Messineo;E. Migliore;S. My;A. Paccagnella;F. Palla;D. Pandoulas;A. Papi;G. Parrini;D. Passeri;M. Pieri;S. Piperov;R. Potenza;V. Radicci;F. Raffaelli;M. Raymond;A. Santocchia;B. Schmitt;G. Selvaggi;L. Servoli;G. Sguazzoni;R. Siedling;L. Silvestris;K. Skog;A. Starodumov;I. Stavitski;G. Stefanini;P. Tempesta;G. Tonelli;A. Tricomi;T. Tuuva;C. Vannini;P.G. Verdini;G. Viertel;Z. Xie;Li Yahong;S. Watts;B. Wittmer. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - ELETTRONICO. - 447:(2000), pp. 142-150. [10.1016/S0168-9002(00)00182-0]
New results on silicon microstrip detectors of CMS tracker
BRUZZI, MARA;D'ALESSANDRO, RAFFAELLO;FOCARDI, ETTORE;
2000
Abstract
Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of thickness were measured for pitches between 60 and and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of of momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈100〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p+ implant has been studied and found to enhance the stability.I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.