The electrical conductivity and the Hall coefficient of high resistivity n-type silicon have been measured before and after irradiation with high fluences of fast neutrons. A model based on the dopant concentration changes observed after irradiation is proposed to describe the sample resistivity dependence on the neutron fluence. From the fit of the experimental data, the initial dopant concentrations and the parameters describing donor and acceptor modifications have been determined.
Hall effect analysis on neutron irradiated high resistivity silicon / U. Biggeri;E. Borchi;M. Bruzzi;S. Lazanu. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 360:(1995), pp. 131-133. [10.1016/0168-9002(94)01710-7]
Hall effect analysis on neutron irradiated high resistivity silicon
BORCHI, EMILIO;BRUZZI, MARA;
1995
Abstract
The electrical conductivity and the Hall coefficient of high resistivity n-type silicon have been measured before and after irradiation with high fluences of fast neutrons. A model based on the dopant concentration changes observed after irradiation is proposed to describe the sample resistivity dependence on the neutron fluence. From the fit of the experimental data, the initial dopant concentrations and the parameters describing donor and acceptor modifications have been determined.
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