High resistivity n-type silicon samples have been irradiated with similar to 1MeV neutrons at fluences between 10(12) and 10(14) n/cm(-2). The radiation induced changes in Hall coefficient and resistivity have been analysed by Hall Effect measurement during a storage time of approximately seven months at room temperature. The Hall coefficient measured for the most irradiated samples, exposed to fluences higher than 4x10(13) cm(-2), has switched from negative to positive values approximately 200 days after the irradiation. This experimental evidence explains the reverse annealing effect observed in neutron irradiated silicon detectors as being related to the creation of a deep acceptor level which causes the change in conductivity from n to p-type of the irradiated silicon bulk during self annealing. The behaviour of irradiated devices has been analyzed with a model taking into account donor removal and acceptor creation. Results are in agreement with others obtained with different experimental techniques.

Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis / U. Biggeri;E. Borchi;M. Bruzzi;S. Lazanu;Z. Li. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 43:(1996), pp. 1599-1604. [10.1109/23.507154]

Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis

BORCHI, EMILIO;BRUZZI, MARA;
1996

Abstract

High resistivity n-type silicon samples have been irradiated with similar to 1MeV neutrons at fluences between 10(12) and 10(14) n/cm(-2). The radiation induced changes in Hall coefficient and resistivity have been analysed by Hall Effect measurement during a storage time of approximately seven months at room temperature. The Hall coefficient measured for the most irradiated samples, exposed to fluences higher than 4x10(13) cm(-2), has switched from negative to positive values approximately 200 days after the irradiation. This experimental evidence explains the reverse annealing effect observed in neutron irradiated silicon detectors as being related to the creation of a deep acceptor level which causes the change in conductivity from n to p-type of the irradiated silicon bulk during self annealing. The behaviour of irradiated devices has been analyzed with a model taking into account donor removal and acceptor creation. Results are in agreement with others obtained with different experimental techniques.
1996
43
1599
1604
U. Biggeri;E. Borchi;M. Bruzzi;S. Lazanu;Z. Li
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/676766
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 9
social impact