The bulk damage induced by charged pions in the Compact Muon Solenoid forward silicon tracker region has been numerically evaluated. Charged pion fluences have been calculated for a distance of 1 m from the interaction vertex and the forward disk, a disk radius between 20 and 40 cm and a magnetic field of 4 T. Times of continuous operation between 60 and 150 d have been considered. The calculated Fermi level and the bulk resistivity along the radius show the occurrence of a radiation induced type inversion of the bulk from n to p in the silicon microstrip after 120 d of operation at 293 K. The calculated effective impurity concentration N-eff suffers changes above one order of magnitude along the disk radius, for operating times of 60 d or higher. The overall study evidences a strong radiation induced inhomogeneity in the bulk properties of the silicon microstrip detectors
Evaluation of charged pions induced damage in the CMS silicon forward detectors / U Biggeri;E Borchi;M Bruzzi;E Catacchini;S Lazanu;G Parrini. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 388:(1997), pp. 345-349. [10.1016/S0168-9002(97)00007-7]
Evaluation of charged pions induced damage in the CMS silicon forward detectors
BORCHI, EMILIO;BRUZZI, MARA;PARRINI, GIULIANO
1997
Abstract
The bulk damage induced by charged pions in the Compact Muon Solenoid forward silicon tracker region has been numerically evaluated. Charged pion fluences have been calculated for a distance of 1 m from the interaction vertex and the forward disk, a disk radius between 20 and 40 cm and a magnetic field of 4 T. Times of continuous operation between 60 and 150 d have been considered. The calculated Fermi level and the bulk resistivity along the radius show the occurrence of a radiation induced type inversion of the bulk from n to p in the silicon microstrip after 120 d of operation at 293 K. The calculated effective impurity concentration N-eff suffers changes above one order of magnitude along the disk radius, for operating times of 60 d or higher. The overall study evidences a strong radiation induced inhomogeneity in the bulk properties of the silicon microstrip detectors
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