Performances of ion-implanted CCDs in the EUV spectral region

The performances of a pair of thinned back-illuminated ion-implanted and laser annealed CCDs have been evaluated in the EUV spectral region. Both the devices have been manufactured by EEV and one of them was also treated with the new technique of anodic etching to improve its quantum efficiency. The measurements performed consist mainly of the determination of the CCD quantum efficiency in the 300-2500 A region. These tests have been performed by means of a new vacuum test facility and a new CCD controller realized in our laboratories which is interfaced with a PC; moreover, to have a low noise, both the CCDs have worked in a slow scan mode and have been cryogenically cooled. The results show that a CCD quantum efficiency decreasing during the tests is present, but demonstrate also that these devices can have a lot of capabilities as EUV detectors.