Mathematical models describing interband tunneling in semiconductor heterostructure devices (superlattices) are discussed and compared to a model, here rigorously derived from the Schrodinger equation. The continuity equation for the probability density is also derived.
Rigorous derivation of Kane models for interband tunneling / G. BORGIOLI; S. BIONDINI. - STAMPA. - Proceedings "WASCOM 2003" 12th Conference on Waves and Stability in Continuous Media:(2004), pp. 70-77. (Intervento presentato al convegno XII CONFERENCE ON WAVES AND STABILITY IN CONTINUOUS MEDIA (WASCOM 2003) tenutosi a VILLASIMIUS (CAGLIARI) nel 1-7 giugno 2003).
Rigorous derivation of Kane models for interband tunneling
BORGIOLI, GIOVANNI
;
2004
Abstract
Mathematical models describing interband tunneling in semiconductor heterostructure devices (superlattices) are discussed and compared to a model, here rigorously derived from the Schrodinger equation. The continuity equation for the probability density is also derived.
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