Scientific community is focusing attention on new compounds based on economic and low-environmental impact elements such as Cu, Sn, Fe and Zn. In particular, quaternary semiconducting materials based on the kesterite (Cu2ZnSnS4) mineral structure are the most promising candidates to overtake the current generation of light-absorbing materials for thin-film solar cells. Electrodeposition is known as a low-cost semiconductor growth technique for applications in electronic devices. Surface limited electrodeposition of atomic layers, can be performed exploiting the Electrochemical Atomic Layer Deposition (E-ALD) technique to obtain sulphides thin films. In-situ SXRD (Surface X Ray Diffraction) measurements were performed at ESRF (Grenoble) and focused on the investigation of the growth mechanism of Cu-S thin films.
In-situ structural characterization of semiconductor thin films for solar cells synthesized by E-ALD / Giaccherini, A.; Cinotti, S.; Picca, R.A.; Carlà, F.; Montegrossi, G.; Capolupo, F.; Felici, R.; Benedetto, F. Di; Furlanetto, S.; Cioffi, N.; Lavacchi, A.; Innocenti, M.. - ELETTRONICO. - (2015), pp. 143-143. (Intervento presentato al convegno XXV Congresso della Divisione di Chimica Analitica della Società Chimica Italiana).
In-situ structural characterization of semiconductor thin films for solar cells synthesized by E-ALD.
GIACCHERINI, ANDREA;CINOTTI, SERENA;CAPOLUPO, FERDINANDO;DI BENEDETTO, FRANCESCO;FURLANETTO, SANDRA;INNOCENTI, MASSIMO
2015
Abstract
Scientific community is focusing attention on new compounds based on economic and low-environmental impact elements such as Cu, Sn, Fe and Zn. In particular, quaternary semiconducting materials based on the kesterite (Cu2ZnSnS4) mineral structure are the most promising candidates to overtake the current generation of light-absorbing materials for thin-film solar cells. Electrodeposition is known as a low-cost semiconductor growth technique for applications in electronic devices. Surface limited electrodeposition of atomic layers, can be performed exploiting the Electrochemical Atomic Layer Deposition (E-ALD) technique to obtain sulphides thin films. In-situ SXRD (Surface X Ray Diffraction) measurements were performed at ESRF (Grenoble) and focused on the investigation of the growth mechanism of Cu-S thin films.
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