Low-temperature technique of thin silicon ion implanted epitaxial detectors

Kordyasz, A. J; Le Neindre, N.; Parlog, M.; Casini, G.; Bougault, R.; Poggi, Giacomo; Bednarek, A.; Kowalczyk, M.; Lopez, O.; Merrer, Y.; Vient, E.; Frankland, J. D.; Bonnet, E.; Chbihi, A.; Gruyer, D.; Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M. F.; Salomon, F.; Bini, Maurizio; Valdre', Simone; Scarlini, Enrico; Pasquali, Gabriele; Pastore, G.; Piantelli, S.; Stefanini, Andrea; Olmi, Alessandro; Barlini, Sandro; Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E.; Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M.; Alba, R.; Santonocito, D.; Maiolino, C.; Cinausero, M.; Gramegna, F.; Marchi, T.; Kozik, T.; Kulig, P.; Twaróg, T.; Sosin, Z.; Ga̧sior, K.; Grzeszczuk, A.; Zipper, W.; Sarnecki, J.; Lipiński, D.; Wodzińska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyżak, K.; Tarasiuk, K. J.; Khabanowa, Z.; Kordyasz, Ł.

doi:10.1140/epja/i2015-15015-2

A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low temperature baking process instead of high-temperature annealing.

Low-temperature technique of thin silicon ion implanted epitaxial detectors / Kordyasz, A.J, Le Neindre, N., Parlog, M., Casini, G., Bougault, R., Poggi, G., Bednarek, A., Kowalczyk, M., Lopez, O., Merrer, Y., Vient, E., Frankland, J.D., Bonnet, E., Chbihi, A., Gruyer, D., Borderie, B., Ademard, G., Edelbruck, P., Rivet, M.F., Salomon, F., et al.. - In: THE EUROPEAN PHYSICAL JOURNAL. A, HADRONS AND NUCLEI. - ISSN 1434-6001. - ELETTRONICO. - 51:(2015), pp. 0-0. [10.1140/epja/i2015-15015-2]