Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
GaAs nanostructures on Si platform / Sanguinetti, S.; Bietti, S.; Scarpellini, D.; Ballabio, A.; Miglio, L.; Isella, G.; Esposito, L.; Frigerio, J.; Fedorov, A.; Gurioli, M.; Biccari, F.; Abbarchi, M.; Vinattieri, A. .. - ELETTRONICO. - (2015), pp. 1-3. (Intervento presentato al convegno Opto-Electronics and Communications Conference (OECC), 2015) [10.1109/OECC.2015.7340229].
GaAs nanostructures on Si platform
GURIOLI, MASSIMO;BICCARI, FRANCESCO;VINATTIERI, ANNA
2015
Abstract
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
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