We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.

High quality GaAs single photon emitters on Si substrate / Bietti, S.; Cavigli, L.; Accanto, N.; Minari, S.; Abbarchi, M.; Isella, G.; Frigeri, C.; Vinattieri, A.; Gurioli, M.; Sanguinetti, S.. - STAMPA. - 1566:(2013), pp. 433-434. (Intervento presentato al convegno 31st International Conference on the Physics of Semiconductors, ICPS 2012 tenutosi a Zurich, che nel 2012) [10.1063/1.4848471].

High quality GaAs single photon emitters on Si substrate

CAVIGLI, LUCIA;VINATTIERI, ANNA;GURIOLI, MASSIMO;
2013

Abstract

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer.
2013
AIP Conference Proceedings
31st International Conference on the Physics of Semiconductors, ICPS 2012
Zurich, che
2012
Bietti, S.; Cavigli, L.; Accanto, N.; Minari, S.; Abbarchi, M.; Isella, G.; Frigeri, C.; Vinattieri, A.; Gurioli, M.; Sanguinetti, S.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1089060
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