The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi₂Se₃ compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.

Investigations on the Electrochemical Atomic Layer Growth of Bi₂Se₃ and the Surface Limited Deposition of Bismuth at the Silver Electrode / Giurlani, Walter; Giaccherini, Andrea; Calisi, Nicola; Zangari, Giovanni; Salvietti, Emanuele; Passaponti, Maurizio; Caporali, Stefano; Innocenti, Massimo. - In: MATERIALS. - ISSN 1996-1944. - ELETTRONICO. - 11:(2018), pp. 1426-1437. [10.3390/ma11081426]

Investigations on the Electrochemical Atomic Layer Growth of Bi₂Se₃ and the Surface Limited Deposition of Bismuth at the Silver Electrode

Giurlani, Walter
;
Giaccherini, Andrea;Calisi, Nicola;Salvietti, Emanuele;Passaponti, Maurizio;Caporali, Stefano;Innocenti, Massimo
2018

Abstract

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi₂Se₃ compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.
11
1426
1437
Giurlani, Walter; Giaccherini, Andrea; Calisi, Nicola; Zangari, Giovanni; Salvietti, Emanuele; Passaponti, Maurizio; Caporali, Stefano; Innocenti, Massimo
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2158/1132731
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact