Optomechanical SiN nano-oscillators in high-finesse Fabry-Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≃10⁷ and a Q-frequency product in excess of 6.2 x 10¹² Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.

Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics / Serra, Enrico; Morana, Bruno; Borrielli, Antonio; Marin, Francesco; Pandraud, Gregory; Pontin, Antonio; Prodi, Giovanni Andrea; Sarro, Pasqualina M.; Bonaldi, Michele. - In: JOURNAL OF MICROELECTROMECHANICAL SYSTEMS. - ISSN 1057-7157. - STAMPA. - (2018), pp. 1-11. [10.1109/JMEMS.2018.2876593]

Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics

Marin, Francesco;Pontin, Antonio;
2018

Abstract

Optomechanical SiN nano-oscillators in high-finesse Fabry-Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≃10⁷ and a Q-frequency product in excess of 6.2 x 10¹² Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.
2018
1
11
Serra, Enrico; Morana, Bruno; Borrielli, Antonio; Marin, Francesco; Pandraud, Gregory; Pontin, Antonio; Prodi, Giovanni Andrea; Sarro, Pasqualina M.; Bonaldi, Michele
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1141819
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