The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology

Droplet epitaxy of semiconductor nanostructures for quantum photonic devices / Gurioli M.; Wang Z.; Rastelli A.; Kuroda T.; Sanguinetti S.. - In: NATURE MATERIALS. - ISSN 1476-1122. - STAMPA. - 18:(2019), pp. 799-810. [10.1038/s41563-019-0355-y]

Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

Gurioli M.
;
SANGUINETTI, STEFANO
2019

Abstract

The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometimes even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the achievements and challenges that are still open, in view of applications in quantum communication and technology
2019
18
799
810
Gurioli M.; Wang Z.; Rastelli A.; Kuroda T.; Sanguinetti S.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1173013
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