We demonstrate a simple self-assembly method based on solid state dewetting of ultrathin silicon films and germanium deposition for the fabrication of efficient antireflection coatings on silicon for light trapping. We fabricate SiGe islands with a high surface density, randomly positioned and broadly varied in size. This allows one to reduce the reflectance to low values in a broad spectral range (from 500 nm to 2500 nm) and a broad angle (up to 55∘) and to trap within the wafer a large portion of the impinging light (∼ 40%) also below the band gap, where the Si substrate is nonabsorbing.
Self-assembled antireflection coatings for light trapping based on SiGe random metasurfaces / Bouabdellaoui M.; Checcucci S.; Wood T.; Naffouti M.; Sena R.P.; Liu K.; Ruiz C.M.; Duche D.; Le Rouzo J.; Escoubas L.; Berginc G.; Bonod N.; Zazoui M.; Favre L.; Metayer L.; Ronda A.; Berbezier I.; Grosso D.; Gurioli M.; Abbarchi M.. - In: PHYSICAL REVIEW MATERIALS. - ISSN 2475-9953. - STAMPA. - 2:(2018), pp. 035203-035207. [10.1103/PhysRevMaterials.2.035203]
Self-assembled antireflection coatings for light trapping based on SiGe random metasurfaces
Checcucci S.
;Gurioli M.
;
2018
Abstract
We demonstrate a simple self-assembly method based on solid state dewetting of ultrathin silicon films and germanium deposition for the fabrication of efficient antireflection coatings on silicon for light trapping. We fabricate SiGe islands with a high surface density, randomly positioned and broadly varied in size. This allows one to reduce the reflectance to low values in a broad spectral range (from 500 nm to 2500 nm) and a broad angle (up to 55∘) and to trap within the wafer a large portion of the impinging light (∼ 40%) also below the band gap, where the Si substrate is nonabsorbing.
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