Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
Gas sensing properties of In2O3 nano-films obtained by low temperature pulsed electron deposition technique on alumina substrates / Addabbo T.; Bruzzi M.; Fort A.; Mugnaini M.; Vignoli V.. - In: SENSORS. - ISSN 1424-8220. - STAMPA. - 18:(2018), pp. 1-17. [10.3390/s18124410]
Gas sensing properties of In2O3 nano-films obtained by low temperature pulsed electron deposition technique on alumina substrates
Bruzzi M.;
2018
Abstract
Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
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