Driven by applications like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with arbitrary statistical distribution functions. This requires numerical schemes that preserve qualitative properties of the solutions, such as positivity of densities, dissipativity and consistency with thermodynamic equilibrium. An extension of the Scharfetter–Gummel scheme guaranteeing consistency with thermodynamic equilibrium is studied. It is derived by replacing the thermal voltage with an averaged diffusion enhancement for which we provide a new explicit formula. This approach avoids solving the costly local nonlinear equations defining the current for generalized Scharfetter–Gummel schemes.

On thermodynamic consistency of a Scharfetter–Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement / Koprucki T.; Rotundo N.; Farrell P.; Doan D.H.; Fuhrmann J.. - In: OPTICAL AND QUANTUM ELECTRONICS. - ISSN 0306-8919. - ELETTRONICO. - 47:(2015), pp. 1327-1332. [10.1007/s11082-014-0050-9]

On thermodynamic consistency of a Scharfetter–Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement

Rotundo N.;
2015

Abstract

Driven by applications like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with arbitrary statistical distribution functions. This requires numerical schemes that preserve qualitative properties of the solutions, such as positivity of densities, dissipativity and consistency with thermodynamic equilibrium. An extension of the Scharfetter–Gummel scheme guaranteeing consistency with thermodynamic equilibrium is studied. It is derived by replacing the thermal voltage with an averaged diffusion enhancement for which we provide a new explicit formula. This approach avoids solving the costly local nonlinear equations defining the current for generalized Scharfetter–Gummel schemes.
2015
47
1327
1332
Koprucki T.; Rotundo N.; Farrell P.; Doan D.H.; Fuhrmann J.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1188983
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