A highly segmented Double-Sided Silicon Strip Detector has been characterized using mono-energetic pulsed beams of protons (1 and 3 MeV) and carbon (13 MeV). The detector was manufactured from a Neutron Transmutation Doped (NTD) silicon wafer yielding a bulk resistivity of 2.3 kOhm cm. In this work we show the interstrip effects caused by the beam striking only one strip and the beam on both the strip and the interstrip gap. The pre-amplified output waveforms of the strips on both detector sides have been digitized at 100 MS/s. Charge sharing, induced signal and charge loss have been investigated for different incident positions between adjacent strips, for beam entering from the junction side and the ohmic side, and as a function of the depletion voltage.
Characterization of a NTD Double-Sided Silicon Strip Detector using a pulsed ion beam / Castoldi A.; Guazzoni C.; Parsani T.; Riccio F.; Carraresi L.; Taccetti F.; Acosta L.; Martel I.; Duenas J.A.. - STAMPA. - (2014), pp. 1-5. (Intervento presentato al convegno IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2014 tenutosi a usa nel 2014) [10.1109/NSSMIC.2014.7431094].
Characterization of a NTD Double-Sided Silicon Strip Detector using a pulsed ion beam
Carraresi L.;
2014
Abstract
A highly segmented Double-Sided Silicon Strip Detector has been characterized using mono-energetic pulsed beams of protons (1 and 3 MeV) and carbon (13 MeV). The detector was manufactured from a Neutron Transmutation Doped (NTD) silicon wafer yielding a bulk resistivity of 2.3 kOhm cm. In this work we show the interstrip effects caused by the beam striking only one strip and the beam on both the strip and the interstrip gap. The pre-amplified output waveforms of the strips on both detector sides have been digitized at 100 MS/s. Charge sharing, induced signal and charge loss have been investigated for different incident positions between adjacent strips, for beam entering from the junction side and the ohmic side, and as a function of the depletion voltage.
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