Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of CsPbBr3 and CsPbCl3 has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications.

A new route for caesium lead halide perovskite deposition / Falsini N.; Ristori A.; Biccari F.; Calisi N.; Roini G.; Scardi P.; Caporali S.; Vinattieri A.. - In: JOURNAL OF THE EUROPEAN OPTICAL SOCIETY. RAPID PUBLICATIONS. - ISSN 1990-2573. - STAMPA. - 17:(2021), pp. 1-7. [10.1186/s41476-021-00153-y]

A new route for caesium lead halide perovskite deposition

Falsini N.
Membro del Collaboration Group
;
Ristori A.
Membro del Collaboration Group
;
Biccari F.
Membro del Collaboration Group
;
Calisi N.
Membro del Collaboration Group
;
Roini G.
Membro del Collaboration Group
;
Caporali S.
Membro del Collaboration Group
;
Vinattieri A.
Membro del Collaboration Group
2021

Abstract

Inorganic metal halide perovskites are relevant semiconductors for optoelectronic devices. The successful deposition of thin films of CsPbBr3 and CsPbCl3 has recently been obtained by Radio-Frequency magnetron sputtering. In this work we compare the morphological, structural and optical characteristics of the two materials obtained with this deposition technique. A detailed photoluminescence (PL) spectroscopy study of the as-grown samples was conducted at the macro and micro scale in a wide temperature range (10-300 K) to fully characterize the PL on sample areas of square centimeters, to assess the origin of the inhomogeneous broadening and to quantify the PL quantum yield quenching. Our results prove that this technique allows for the realization of high quality nanometric films with controlled thickness of relevance for optoelectronic applications.
2021
17
1
7
Goal 7: Affordable and clean energy
Falsini N.; Ristori A.; Biccari F.; Calisi N.; Roini G.; Scardi P.; Caporali S.; Vinattieri A.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1251057
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