In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices / Peverini, Francesca; Bizzarri, Marco; Boscardin, Maurizio; Calcagnile, Lucio; Caprai, Mirco; Caricato, Anna Paola; Cirrone, Giuseppe Antonio Pablo; Crivellari, Michele; Cuttone, Giacomo; Dunand, Sylvain; Fanò, Livio; Gianfelici, Benedetta; Hammad, Omar; Ionica, Maria; Kanxheri, Keida; Large, Matthew; Maruccio, Giuseppe; Menichelli, Mauro; Monteduro, Anna Grazia; Moscatelli, Francesco; Morozzi, Arianna; Pallotta, Stefania; Papi, Andrea; Passeri, Daniele; Petasecca, Marco; Petringa, Giada; Pis, Igor; Quarta, Gianluca; Rizzato, Silvia; Rossi, Alessandro; Rossi, Giulia; Scorzoni, Andrea; Soncini, Cristian; Servoli, Leonello; Tacchi, Silvia; Talamonti, Cinzia; Verzellesi, Giovanni; Wyrsch, Nicolas; Zema, Nicola; Pedio, Maddalena. - In: NANOMATERIALS. - ISSN 2079-4991. - ELETTRONICO. - 12:(2022), pp. 3466.0-3466.0. [10.3390/nano12193466]

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Bizzarri, Marco;Calcagnile, Lucio;Maruccio, Giuseppe;Pallotta, Stefania;Papi, Andrea;Talamonti, Cinzia;
2022

Abstract

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.
2022
12
0
0
Peverini, Francesca; Bizzarri, Marco; Boscardin, Maurizio; Calcagnile, Lucio; Caprai, Mirco; Caricato, Anna Paola; Cirrone, Giuseppe Antonio Pablo; Cr...espandi
File in questo prodotto:
File Dimensione Formato  
nanomaterials-12-03466-v3.pdf

accesso aperto

Tipologia: Pdf editoriale (Version of record)
Licenza: Open Access
Dimensione 2.44 MB
Formato Adobe PDF
2.44 MB Adobe PDF

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1286509
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact