This paper introduces a new architecture of balanced passive mixer aimed at providing very high bandwidth and very high isolation between RF and IF ports. The architecture is based on a double Marchand balun that allows routing the interconnection between the quad-transistors terminals such that the overlaps and misalignment between interconnections are avoided. The paper presents a mixer prototype fully integrated in 0.2 μ m GaAs p-HEMT process and is capable to convert signal in the the 0.5-18.5 GHz bandwidth into the 6-12 GHz bandwidth. Measurement reports a conversion gain between -3.5 dB and -6.5 dB and an isolation between RF (input) and IF (output) between 36 dB and 42 dB, while an LO isolation to output port in excess of 40 dB.

A New Architecture of Broadband GaAs MMIC Balanced Mixer for Very High RF/IF Isolation for 0.5-18.5 GHz Signal Analysis / Pagnini L.; Collodi G.; Passafiume M.; Cidronali A.. - ELETTRONICO. - (2022), pp. 216-219. ((Intervento presentato al convegno European Microwave Integrated Circuits [10.23919/EuMIC54520.2022.9923516].

A New Architecture of Broadband GaAs MMIC Balanced Mixer for Very High RF/IF Isolation for 0.5-18.5 GHz Signal Analysis

Pagnini L.
Membro del Collaboration Group
;
Collodi G.
Membro del Collaboration Group
;
Passafiume M.
Membro del Collaboration Group
;
Cidronali A.
Membro del Collaboration Group
2022

Abstract

This paper introduces a new architecture of balanced passive mixer aimed at providing very high bandwidth and very high isolation between RF and IF ports. The architecture is based on a double Marchand balun that allows routing the interconnection between the quad-transistors terminals such that the overlaps and misalignment between interconnections are avoided. The paper presents a mixer prototype fully integrated in 0.2 μ m GaAs p-HEMT process and is capable to convert signal in the the 0.5-18.5 GHz bandwidth into the 6-12 GHz bandwidth. Measurement reports a conversion gain between -3.5 dB and -6.5 dB and an isolation between RF (input) and IF (output) between 36 dB and 42 dB, while an LO isolation to output port in excess of 40 dB.
proceedings of 17th European Microwave Integrated Circuits
European Microwave Integrated Circuits
Pagnini L.; Collodi G.; Passafiume M.; Cidronali A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2158/1291332
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