There is increasing interest in the role of metal halide perovskites for heterogeneous catalysis. Here, we report a Ge-based 2D perovskite material that shows intrinsic water stability realized through organic cation engineering. Incorporating 4-phenylbenzilammonium (PhBz) we demonstrate, by means of extended experimental and computational results, that PhBz2GeBr4 and PhBz2GeI4 can achieve relevant air and water stability. The creation of composites embedding graphitic carbon nitride (g-C3N4) allows a proof of concept for light-induced hydrogen evolution in an aqueous environment by 2D Ge-based perovskites thanks to the effective charge transfer at the heterojunction between the two semiconductors.

Air- and water-stable and photocatalytically active germanium-based 2D perovskites by organic spacer engineering / Romani L.; Speltini A.; Chiara R.; Morana M.; Coccia C.; Tedesco C.; Armenise V.; Colella S.; Milella A.; Listorti A.; Profumo A.; Ambrosio F.; Mosconi E.; Pau R.; Pitzalis F.; Simbula A.; Ricciarelli D.; Saba M.; Medina-Llamas M.; De Angelis F.; Malavasi L.. - In: CELL REPORTS PHYSICAL SCIENCE. - ISSN 2666-3864. - ELETTRONICO. - 4:(2023), pp. 101214.0-101214.0. [10.1016/j.xcrp.2022.101214]

Air- and water-stable and photocatalytically active germanium-based 2D perovskites by organic spacer engineering

Morana M.;
2023

Abstract

There is increasing interest in the role of metal halide perovskites for heterogeneous catalysis. Here, we report a Ge-based 2D perovskite material that shows intrinsic water stability realized through organic cation engineering. Incorporating 4-phenylbenzilammonium (PhBz) we demonstrate, by means of extended experimental and computational results, that PhBz2GeBr4 and PhBz2GeI4 can achieve relevant air and water stability. The creation of composites embedding graphitic carbon nitride (g-C3N4) allows a proof of concept for light-induced hydrogen evolution in an aqueous environment by 2D Ge-based perovskites thanks to the effective charge transfer at the heterojunction between the two semiconductors.
2023
4
0
0
Romani L.; Speltini A.; Chiara R.; Morana M.; Coccia C.; Tedesco C.; Armenise V.; Colella S.; Milella A.; Listorti A.; Profumo A.; Ambrosio F.; Mosconi E.; Pau R.; Pitzalis F.; Simbula A.; Ricciarelli D.; Saba M.; Medina-Llamas M.; De Angelis F.; Malavasi L.
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1296902
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