In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high- power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
Silicon Carbide devices for radiation detection and measurements / La Via F., Tudisco S., Altana C., Boscardin M., Ciampi C., Cirrone G.A.P., Fazzi A., Giove D., Gorini G., Lanzalone G., Muoio A., Pasquali G., Petringa G., Puglia S.M.R., Rebai M., Santangelo A., Trifiro A.. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - ELETTRONICO. - 1561:(2020), pp. 0-0. (Detection Systems and Techniques in Nuclear and Particle Physics (DeSyT2019) Messina 11-13 September 2019) [10.1088/1742-6596/1561/1/012013].
Silicon Carbide devices for radiation detection and measurements
Ciampi C.;Pasquali G.;
2020
Abstract
In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high- power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
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