In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high- power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
Silicon Carbide devices for radiation detection and measurements / La Via F.; Tudisco S.; Altana C.; Boscardin M.; Ciampi C.; Cirrone G.A.P.; Fazzi A.; Giove D.; Gorini G.; Lanzalone G.; Muoio A.; Pasquali G.; Petringa G.; Puglia S.M.R.; Rebai M.; Santangelo A.; Trifiro A.. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - ELETTRONICO. - 1561:(2020), pp. 0-0. (Intervento presentato al convegno Detection Systems and Techniques in Nuclear and Particle Physics (DeSyT2019) tenutosi a Messina nel 11-13 September 2019) [10.1088/1742-6596/1561/1/012013].
Silicon Carbide devices for radiation detection and measurements
Ciampi C.;Pasquali G.;
2020
Abstract
In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high- power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
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