Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.
Light emission from color centers in phosphorus-doped diamond / Sledz, Florian; Flatae, Assegid M.; Lagomarsino, Stefano; Piccolomo, Savino; Nicley, Shannon S.; Haenen, Ken; Rechenberg, Robert; Becker, Michael F.; Sciortino, Silvio; Gelli, Nicla; Giuntini, Lorenzo; Speranza, Giorgio; Agio, Mario. - In: EPJ WEB OF CONFERENCES. - ISSN 2100-014X. - ELETTRONICO. - 266:(2022), pp. 0-0. [10.1051/epjconf/202226609008]
Light emission from color centers in phosphorus-doped diamond
Lagomarsino, Stefano;Sciortino, Silvio;Giuntini, Lorenzo;
2022
Abstract
Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.File | Dimensione | Formato | |
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