We demonstrate efficient anti reflection coatings based on adiabatic index matching obtained via nano-imprint lithography. They exhibit high total transmission, achromaticity (99.5% < T < 99.8% from 390 to 900 nm and 99% < T < 99.5% from 800 to 1600 nm) and wide angular acceptance (T > 99% up to 50 degrees). Our devices show high laser-induced damage thresholds in the sub-picosecond (>5 J/cm2 at 1030 nm, 500 fs), nanosecond (>150 J/cm2 at 1064 nm, 12 ns and >100 J/cm2 at 532 nm, 12 ns) regimes, and low absorption in the CW regime (<1.3 ppm at 1080 nm), close to those of the fused silica substrate.
Nano-imprint lithography of broad-band and wide-angle antireflective structures for high-power lasers / Modaresialam, Mehrnaz; Granchi, Nicoletta; Stehlik, Marek; Petite, Camille; Delegeanu, Sorin; Gourdin, Anthony; Bouabdellaoui, Mohammed; Intonti, Francesca; Kerzabi, Badre; Grosso, David; Gallais, Laurent; Abbarchi, Marco. - In: OPTICS EXPRESS. - ISSN 1094-4087. - ELETTRONICO. - 32:(2024), pp. 12967-12981. [10.1364/oe.518828]
Nano-imprint lithography of broad-band and wide-angle antireflective structures for high-power lasers
Granchi, Nicoletta;Intonti, Francesca;
2024
Abstract
We demonstrate efficient anti reflection coatings based on adiabatic index matching obtained via nano-imprint lithography. They exhibit high total transmission, achromaticity (99.5% < T < 99.8% from 390 to 900 nm and 99% < T < 99.5% from 800 to 1600 nm) and wide angular acceptance (T > 99% up to 50 degrees). Our devices show high laser-induced damage thresholds in the sub-picosecond (>5 J/cm2 at 1030 nm, 500 fs), nanosecond (>150 J/cm2 at 1064 nm, 12 ns and >100 J/cm2 at 532 nm, 12 ns) regimes, and low absorption in the CW regime (<1.3 ppm at 1080 nm), close to those of the fused silica substrate.File | Dimensione | Formato | |
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