Front-End Design in SiGe BiCMOS Technology for V-band High Resolution Imaging

This paper presents a front-end chain with variable gain suitable for high resolution imaging applications in V-band, based in SiGe BiCMOS technology, with operative frequency from 57 GHz to 64 GHz. The IC circuit topology is based on a Gilbert mixer cell where the transconductance stage is designed as a differential low-noise amplifier, thus permitting current reuse while maintaining a single 1.8 V supply voltage and with a total power consumption of 31 mA. The simulated receiver conversion gain spans from 20 dB to 30 dB with a SSB-NF below 6 dB over the operative frequency range, and an input referred power compression point of -17 dBm across the bandwidth.