The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.75mA at 500mV and generates an output power of -16dBm. The maximum tuning range is 150MHz and the single sideband-to-carrier ratio (SSCR) is of -105dBc/Hz at 5MHz.
Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application / Cidronali A.; Collodi G.; Camprini M.; Nair V.; Manes G.; Lewis J.; Goronkin H.. - STAMPA. - 1:(2002), pp. 43-46. (Intervento presentato al convegno IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM) [10.1109/MWSYM.2002.1011554].
Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application
Cidronali A.;Collodi G.;Camprini M.;Manes G.;
2002
Abstract
The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6GHz band suitable for wireless applications. The circuit draws a current of 1.75mA at 500mV and generates an output power of -16dBm. The maximum tuning range is 150MHz and the single sideband-to-carrier ratio (SSCR) is of -105dBc/Hz at 5MHz.File | Dimensione | Formato | |
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