A scheme to produce time-bin entangled pairs of electrons and holes is proposed. It is based on a high-frequency time-resolved single-electron source from a quantum dot coupled to one-dimensional chiral channels. Operating the device in the weak tunneling regime, we show that at the lowest order in the tunneling rate, an electron-hole pair is emitted in a coherent superposition state of different time bins determined by the driving pulse sequence.

Time-bin entanglement of quasiparticles in semiconductor devices / CHIROLLI L; GIOVANNETTI V; FAZIO R; SCARANI V. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - ELETTRONICO. - 84:(2011), pp. 195307-195312. [10.1103/PhysRevB.84.195307]

Time-bin entanglement of quasiparticles in semiconductor devices

CHIROLLI L;
2011

Abstract

A scheme to produce time-bin entangled pairs of electrons and holes is proposed. It is based on a high-frequency time-resolved single-electron source from a quantum dot coupled to one-dimensional chiral channels. Operating the device in the weak tunneling regime, we show that at the lowest order in the tunneling rate, an electron-hole pair is emitted in a coherent superposition state of different time bins determined by the driving pulse sequence.
2011
84
195307
195312
CHIROLLI L; GIOVANNETTI V; FAZIO R; SCARANI V
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1421455
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