We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.

Proposal for a Datta-Das transistor in the quantum Hall regime / CHIROLLI L; VENTURELLI D; TADDEI F; FAZIO R; GIOVANNETTI V. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1550-235X. - ELETTRONICO. - 85:(2012), p. 155317.155317. [http://dx.doi.org/10.1103/PhysRevB.85.155317]

Proposal for a Datta-Das transistor in the quantum Hall regime

CHIROLLI L;
2012

Abstract

We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.
2012
85
155317
CHIROLLI L; VENTURELLI D; TADDEI F; FAZIO R; GIOVANNETTI V
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/1421462
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