Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.
Silicon carbide for future intense luminosity nuclear physics investigations / Tudisco S.; Altana C.; Boscardin M.; Calcagno L.; Ciampi C.; Cirrone G.A.P.; Fazzi A.; Giove D.; Gorini G.; Labate L.; La Via F.; Lanzalone G.; Litrico G.; Muoio A.; Pasquali G.; Puglia S.M.R.; Rebai M.; Ronchin S.; Santangelo A.; Scuderi V.; Trifiro A.; Zimbone M.. - In: IL NUOVO CIMENTO C. - ISSN 2037-4909. - ELETTRONICO. - 42:(2019), pp. 0-0. ( EuNPC 2018) [10.1393/ncc/i2019-19074-1].
Silicon carbide for future intense luminosity nuclear physics investigations
Ciampi C.;Pasquali G.;
2019
Abstract
Silicon carbide (SiC) is one of the compound semiconductor which has been considered as a potential alternative to Silicon for the fabrication of radiation hard particles detectors. Material, detectors implementation and possible application in the future INFN projects has been discussed.
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