Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices / Menichelli, M., Aziz, S., Bashiri, A., Bizzarri, M., Buti, C., Calcagnile, L., Calvo, D., Caprai, M., Caputo, D., Caricato, A.P., Catalano, R., Cazzanelli, M., Cirio, R., Cirrone, G.A.P., Cittadini, F., Croci, T., Cuttone, G., de Cesare, G., De Remigis, P., Dunand, S., et al.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - ELETTRONICO. - 72:(2025), pp. 3824-3829. [10.1109/tns.2025.3619653]
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Buti, Clarissa;Pallotta, Stefania;Talamonti, Cinzia;
2025
Abstract
Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.
I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
