Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices / Menichelli, Mauro; Aziz, Saba; Bashiri, Aishah; Bizzarri, Marco; Buti, Clarissa; Calcagnile, Lucio; Calvo, Daniela; Caprai, Mirco; Caputo, Domenico; Caricato, Anna P.; Catalano, Roberto; Cazzanelli, Massimo; Cirio, Roberto; Cirrone, Giuseppe A. P.; Cittadini, Federico; Croci, Tommaso; Cuttone, Giacomo; de Cesare, Giampiero; De Remigis, Paolo; Dunand, Sylvain; Fabi, Michele; Frontini, Luca; Grimani, Catia; Guarrera, Mariacristina; Hasnaoui, Hamza; Ionica, Maria; Kanxheri, Keida; Large, Matthew; Lenta, Francesca; Liberali, Valentino; Lovecchio, Nicola; Martino, Maurizio; Maruccio, Giuseppe; Maruccio, Lucio; Mazza, Giovanni; Monteduro, Anna G.; Morozzi, Arianna; Nascetti, Augusto; Pallotta, Stefania; Papi, Andrea; Passeri, Daniele; Pedio, Maddalena; Petasecca, Marco; Petringa, Giada; Peverini, Francesca; Placidi, Pisana; Polo, Matteo; Quaranta, Alberto; Quarta, Gianluca; Rizzato, Silvia; Sabbatini, Federico; Servoli, Leonello; Stabile, Alberto; Talamonti, Cinzia; Thomet, Jonathan E.; Mora, Monica S. Vasquez; Villani, Mattia; Wheadon, Richard J.; Wyrsch, Nicolas; Zema, Nicola; Tosti, Luca. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - ELETTRONICO. - 72:(2025), pp. 3824-3829. [10.1109/tns.2025.3619653]
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Buti, Clarissa;Pallotta, Stefania;Talamonti, Cinzia;
2025
Abstract
Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.
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