In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (I\V) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs I\V characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.

A highly linear single balanced mixer based on heterojunction interband tunneling diode / A. CIDRONALI; G. COLLODI; M. DESHPANDE; N. EL-ZEIN; G.MANES; V. NAIR; H. GORONKIN. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 49:(2001), pp. 2437-2445. [10.1109/22.971633]

A highly linear single balanced mixer based on heterojunction interband tunneling diode

CIDRONALI, ALESSANDRO;COLLODI, GIOVANNI;
2001

Abstract

In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (I\V) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs I\V characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.
2001
49
2437
2445
A. CIDRONALI; G. COLLODI; M. DESHPANDE; N. EL-ZEIN; G.MANES; V. NAIR; H. GORONKIN
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/203624
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