ABSTRACT In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4 10^16 p/cm^2 and 7 10^15 n/cm^2, we found the diodes still able to detect alpha and beta particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7 um after the proton irradiation and 5 um after the neutron irradiation. As the irradiation level approaches the range ~10^15/cm^2, the material behaves as intrinsic due to a very high compensation effect.

Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes / S. SCIORTINO; F. HARTJES; S. LAGOMARSINO; F. NAVA; M. BRIANZI; V. CINDRO; C. LANZIERI; M. MOLL; P. VANNI. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 552:(2005), pp. 138-145. [10.1016/j.nima.2005.06.017]

Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

SCIORTINO, SILVIO;LAGOMARSINO, STEFANO;
2005

Abstract

ABSTRACT In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4 10^16 p/cm^2 and 7 10^15 n/cm^2, we found the diodes still able to detect alpha and beta particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7 um after the proton irradiation and 5 um after the neutron irradiation. As the irradiation level approaches the range ~10^15/cm^2, the material behaves as intrinsic due to a very high compensation effect.
2005
552
138
145
S. SCIORTINO; F. HARTJES; S. LAGOMARSINO; F. NAVA; M. BRIANZI; V. CINDRO; C. LANZIERI; M. MOLL; P. VANNI
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/222653
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