Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 μm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region.

Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors / F. MOSCATELLI; A. SCORZONI; A. POGGI; M. BRUZZI; S. LAGOMARSINO; S. MERSI; S. SCIORTINO; M. LAZAR; A. DI PLACIDO; R. NIPOTI. - ELETTRONICO. - 483-485:(2005), pp. 1021-1024. (Intervento presentato al convegno 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004) [doi:10.1016/j.nima.2005.06.017].

Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

BRUZZI, MARA;LAGOMARSINO, STEFANO;SCIORTINO, SILVIO;
2005

Abstract

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 μm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region.
2005
ECRSCRM2004: proceedings
5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Goal 9: Industry, Innovation, and Infrastructure
F. MOSCATELLI; A. SCORZONI; A. POGGI; M. BRUZZI; S. LAGOMARSINO; S. MERSI; S. SCIORTINO; M. LAZAR; A. DI PLACIDO; R. NIPOTI
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/222655
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