Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 μm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region.
Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors / F. MOSCATELLI, A. SCORZONI, A. POGGI, M. BRUZZI, S. LAGOMARSINO, S. MERSI, S. SCIORTINO, M. LAZAR, A. DI PLACIDO, R. NIPOTI. - ELETTRONICO. - 483-485:(2005), pp. 1021-1024. (5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 ) [doi:10.1016/j.nima.2005.06.017].
Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
BRUZZI, MARA;LAGOMARSINO, STEFANO;SCIORTINO, SILVIO;
2005
Abstract
Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 μm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/μm) equal to the estimated width of the depleted region.
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