Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi 90Sr β-source and with 5.48 MeV α-particles from 241Am. The response of the SiC devices, investigated over a range of thickness up to ~20μm, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.
Recent results on particle detection with epitaxial SiC Schottky diodes / M. BRUZZI; F. HARTJES; S. LAGOMARSINO; F. NAVA; S. SCIORTINO; P. VANNI. - ELETTRONICO. - 1:(2003), pp. 14-17. (Intervento presentato al convegno 2002 IEEE Nuclear Science Symposium and Medical Imaging Conference tenutosi a Norfolk, Virginia nel 10 November through Saturday, 16 November 2002) [10.1109/NSSMIC.2002.1239258].
Recent results on particle detection with epitaxial SiC Schottky diodes
BRUZZI, MARA;LAGOMARSINO, STEFANO;SCIORTINO, SILVIO;
2003
Abstract
Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi 90Sr β-source and with 5.48 MeV α-particles from 241Am. The response of the SiC devices, investigated over a range of thickness up to ~20μm, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.
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