Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi 90Sr β-source and with 5.48 MeV α-particles from 241Am. The response of the SiC devices, investigated over a range of thickness up to ~20μm, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.

Recent results on particle detection with epitaxial SiC Schottky diodes / M. BRUZZI; F. HARTJES; S. LAGOMARSINO; F. NAVA; S. SCIORTINO; P. VANNI. - ELETTRONICO. - 1:(2003), pp. 14-17. (Intervento presentato al convegno 2002 IEEE Nuclear Science Symposium and Medical Imaging Conference tenutosi a Norfolk, Virginia nel 10 November through Saturday, 16 November 2002) [10.1109/NSSMIC.2002.1239258].

Recent results on particle detection with epitaxial SiC Schottky diodes

BRUZZI, MARA;LAGOMARSINO, STEFANO;SCIORTINO, SILVIO;
2003

Abstract

Schottky diodes based on a 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+ type substrate have been tested as particle detectors. The charge collection efficiency (CCE) has been tested by means of a 0.1mCi 90Sr β-source and with 5.48 MeV α-particles from 241Am. The response of the SiC devices, investigated over a range of thickness up to ~20μm, is characterized by a 100%CCE, the charge signal is stable and reproducible, with no evidence of priming or polarization effects.
2003
2002 IEEE Nuclear Science Symposium Conference Record
2002 IEEE Nuclear Science Symposium and Medical Imaging Conference
Norfolk, Virginia
10 November through Saturday, 16 November 2002
M. BRUZZI; F. HARTJES; S. LAGOMARSINO; F. NAVA; S. SCIORTINO; P. VANNI
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Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/241983
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