We have studied different strained InGaAS/GaAS ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content (x=O.35). We associate this behavior to the localization of carriers in regions of quasi onedimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements and explained through theoretical calculations

Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces / J.Sanchez-Dehesa;F. Meseguer; R. Mayoral;J.A. Porto; C.Lopez; J. Martinez-Pastor;A. Vinattieri; M.Colocci; A.Marti-Ceschin; N.Grandjean; J.Massies. - STAMPA. - 2139:(1994), pp. 222-233. (Intervento presentato al convegno Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering).

Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces

VINATTIERI, ANNA;COLOCCI, MARCELLO;
1994

Abstract

We have studied different strained InGaAS/GaAS ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content (x=O.35). We associate this behavior to the localization of carriers in regions of quasi onedimensional confinement which are induced by fluctuations in the lateral periodicity of the strained layers. This assumption is supported by time resolved measurements and explained through theoretical calculations
1994
SPIE Proceedings
Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering
J.Sanchez-Dehesa;F. Meseguer; R. Mayoral;J.A. Porto; C.Lopez; J. Martinez-Pastor;A. Vinattieri; M.Colocci; A.Marti-Ceschin; N.Grandjean; J.Massies...espandi
File in questo prodotto:
File Dimensione Formato  
sanchez-dehesa1994.pdf

Accesso chiuso

Tipologia: Pdf editoriale (Version of record)
Licenza: Tutti i diritti riservati
Dimensione 1.18 MB
Formato Adobe PDF
1.18 MB Adobe PDF   Richiedi una copia

I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificatore per citare o creare un link a questa risorsa: https://hdl.handle.net/2158/316082
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 2
social impact