We report polarization-resolved high spectral resolution photoluminescence measurements in self-assembled strain-free GaAs/Al0.3Ga0.7As quantum dots designed and realized in order to reduce as much as possible strain and segregation, which affected previous finestructure splitting FSS experiments. Photoluminescence from isolated quantum dots exhibits a linearly polarized FSS. FSS clearly shows a quantum size effect monotonically decreasing from 90 to 20 eV by decreasing the quantum dot size increasing emission energy . While this finding is similar to that observed in strained In Ga As/GaAs quantum dots, clearly it requires a different explanation, being our quantum dots not affected by strain-induced piezoelectricity. We ascribed the observed FSS to a size dependent reduction in dot shape anisotropy as evidenced by structural data analysis. Moreover the linear polarization in dots with shape close to cylindrical symmetry is not along the 110 crystallographic axis but it turns out randomly distributed, highlighting the role of extrinsic effects.
Exciton fine structure in strain-free GaAs/Al0.3Ga0.7As quantum dots:Extrinsic effects / M.Abbarchi;C.A.Mastrandrea;T.Kuroda;T.Mano;K.Sakoda;N.Koguchi;S.Sanguinetti;A.Vinattieri;M.Gurioli. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 78:(2008), pp. 125321-1-125321-4. [10.1103/PhysRevB.78.125321]
Exciton fine structure in strain-free GaAs/Al0.3Ga0.7As quantum dots:Extrinsic effects
ABBARCHI, MARCO;VINATTIERI, ANNA;GURIOLI, MASSIMO
2008
Abstract
We report polarization-resolved high spectral resolution photoluminescence measurements in self-assembled strain-free GaAs/Al0.3Ga0.7As quantum dots designed and realized in order to reduce as much as possible strain and segregation, which affected previous finestructure splitting FSS experiments. Photoluminescence from isolated quantum dots exhibits a linearly polarized FSS. FSS clearly shows a quantum size effect monotonically decreasing from 90 to 20 eV by decreasing the quantum dot size increasing emission energy . While this finding is similar to that observed in strained In Ga As/GaAs quantum dots, clearly it requires a different explanation, being our quantum dots not affected by strain-induced piezoelectricity. We ascribed the observed FSS to a size dependent reduction in dot shape anisotropy as evidenced by structural data analysis. Moreover the linear polarization in dots with shape close to cylindrical symmetry is not along the 110 crystallographic axis but it turns out randomly distributed, highlighting the role of extrinsic effects.File | Dimensione | Formato | |
---|---|---|---|
PRB78FS.pdf
Accesso chiuso
Tipologia:
Versione finale referata (Postprint, Accepted manuscript)
Licenza:
Tutti i diritti riservati
Dimensione
413.77 kB
Formato
Adobe PDF
|
413.77 kB | Adobe PDF | Richiedi una copia |
absr.pdf
accesso aperto
Tipologia:
Altro
Licenza:
Open Access
Dimensione
18.28 kB
Formato
Adobe PDF
|
18.28 kB | Adobe PDF |
I documenti in FLORE sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.