The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.
Pulse height defect of energetic heavy ions in ion-implanted Si detectors / G.PASQUALI; G.CASINI; M.BINI; S.CALAMAI; A.OLMI; G. POGGI; A. A. STEFANINI; F.SAINT-LAURENT; J.C.STECKMEYER. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 405:(1998), pp. 39-44. [10.1016/S0168-9002(97)01174-1]
Pulse height defect of energetic heavy ions in ion-implanted Si detectors
PASQUALI, GABRIELE;BINI, MAURIZIO;OLMI, ALESSANDRO;POGGI, GIACOMO;STEFANINI, ANDREA;
1998
Abstract
The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.
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