New TCT measurements reveal the existence of a strong electric Þeld, before full depletion, near both p+ and n+ side of high- and medium-resistivity silicon detectors, irradiated over space-charge sign inversion. More, by injecting carriers near the low-Þeld side, double-peaked TCT current pulses are observed. This fact can be justiÞed by assuming the presence of two deep levels in the gap, an acceptor like above mid-gap, and a donor like in the lower half of the gap, which can support the existence of two depleted regions. Particularly, the theoretical analysis of the TCT current proÞles has been developed, and the second peak existence has been explained as the e¤ect of carriers re-injection from ENB inside depleted regions.
Modelling of observed double-junction effect / D. Menichelli; M. Bruzzi; Z. Li; V. Eremin. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 426:(1999), pp. 135-139.
Modelling of observed double-junction effect
MENICHELLI, DAVID;BRUZZI, MARA;
1999
Abstract
New TCT measurements reveal the existence of a strong electric Þeld, before full depletion, near both p+ and n+ side of high- and medium-resistivity silicon detectors, irradiated over space-charge sign inversion. More, by injecting carriers near the low-Þeld side, double-peaked TCT current pulses are observed. This fact can be justiÞed by assuming the presence of two deep levels in the gap, an acceptor like above mid-gap, and a donor like in the lower half of the gap, which can support the existence of two depleted regions. Particularly, the theoretical analysis of the TCT current proÞles has been developed, and the second peak existence has been explained as the e¤ect of carriers re-injection from ENB inside depleted regions.
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