A new effect based on a recombination bistability driven by light irradiance is theoretically anticipated for semiconductors in which recombination is assured by multiply charged centers.
Optoelectronic bistability effect in semiconductors / S. LAGOMARSINO. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - ELETTRONICO. - 78:(2008), pp. 1252011-1252018. [10.1103/PhysRevB.78.125201]
Optoelectronic bistability effect in semiconductors
LAGOMARSINO, STEFANO
2008
Abstract
A new effect based on a recombination bistability driven by light irradiance is theoretically anticipated for semiconductors in which recombination is assured by multiply charged centers.
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